1 2MBI200UC-120 igbt modules igbt module (u series) 1200v / 200a / 2 in one package features high speed switching voltage drive low inductance module structure applications inverter for motor drive ac and dc servo drive amplifer uninterruptible power supply industrial machines, such as welding machines maximum ratings and characteristics absolute maximum ratings (at tc=25 c unless otherwise specifed) items symbols conditions maximum ratings units collector-emitter voltage v ces 1200 v gate-emitter voltage v ges 20 v collector current ic continuous tc=25c 300 a tc=80c 200 ic pulse 1ms tc=25c 600 tc=80c 400 -ic 200 -ic pulse 400 collector power dissipation pc 1 device 1040 w junction temperature tj 150 c storage temperature tstg -40 to +125 c isolation voltage between terminal and copper base (*1) v iso ac : 1min. 2500 vac screw torque mounting (*2) 3.5 nm terminals (*2) 4.5 note *1: all terminals should be connected together when isolation test will be done. note *2: recommendable value : mounting : 2.5-3.5 nm (m5 or m6), terminals : 3.5-4.5 nm (m6) electrical characteristics (at tj= 25c unless otherwise specifed) items symbols conditions characteristics units min. typ. max. zero gate voltage collector current i ces v ge = 0v, v ce = 1200v - - 2.0 ma gate-emitter leakage current i ges v ce = 0v, v ge = 20v - - 400 na gate-emitter threshold voltage v ge (th) v ce = 20v, i c = 200ma 4.5 6.5 8.5 v collector-emitter saturation voltage v ce (sat) (teminal) v ge = 15v i c = 200a tj=25c - 1.85 2.20 v tj=125c - 2.10 - v ce (sat) (chip) tj=25c - 1.75 2.10 tj=125c - 2.00 - input capacitance cies v ge = 0v, v ce = 10v, f = 1mhz - 22 - nf turn-on time ton v cc = 600v i c = 200a v ge = 15v r g = 3? - 0.36 1.20 s tr - 0.21 0.60 tr (i) - 0.03 - turn-off time toff - 0.37 1.00 tf - 0.07 0.30 forward on voltage v f (teminal) v ge = 0v i f = 200a tj=25c - 1.70 2.00 v tj=125c - 1.80 - v f (chip) tj=25c - 1.60 1.90 tj=125c - 1.70 - reverse recovery time trr i f = 200a - - 0.35 s lead resistance, terminal-chip (*3) r lead - 0.53 - m? note *3: biggest internal terminal resistance among arm. thermal resistance characteristics items symbols conditions characteristics units min. typ. max. thermal resistance (1device) rth(j-c) igbt - - 0.12 c/w fwd - - 0.20 contact thermal resistance rth(c-f) with thermal compound (*4) - 0.025 - note *4: this is the value which is defned mounting on the additional cooling fn with thermal compound.
2 2MBI200UC-120 3 igbt modules characteristics (representative) c o ll e c t o r c u rr en t v s . c o ll e c t o r- e m itt e r v o lt a ge ( t y p . ) t j = 125 c / c h i p dynamic gate charge (typ.) c o ll e c t o r c u rr en t v s . c o ll e c t o r- e m itt e r v o lt a ge ( t y p . ) t j = 25 c / c h i p c o ll e c t o r c u rr en t v s . c o ll e c t o r- e m itt e r v o lt a ge ( t y p . ) vge=15v / chip c o ll e c t o r- e m itt e r v o lt a ge v s . g a t e - e m itt e r v o lt a ge ( t y p . ) tj=25c / chip capacitance vs. collector-emitter voltage (typ.) vg e =0 v , f = 1 mh z , t j = 25 c v cc =6 00 v , i c =2 00 a , t j = 25 c 0 10 0 20 0 30 0 40 0 50 0 0 1 2 3 4 5 c o l l e c t o r c u rre n t : i c [ a ] c oll ect o r- e m itt er vo l t ag e : v ce [v ] v g e =20 v 15 v 12 v 10 v 8 v 0 10 0 20 0 30 0 40 0 50 0 0 1 2 3 4 5 c o l l e c t o r c u rre n t : i c [ a ] c oll ect o r- e m itt er vo l t ag e : v ce [v ] v g e =20 v 15 v 12 v 10 v 8 v 0 10 0 20 0 30 0 40 0 50 0 0 1 2 3 4 5 c o l l e c t o r c u rre n t : i c [ a ] c oll ect o r- e m itt er vo l t ag e : v ce [v ] tj=125c tj=25c 0 2 4 6 8 1 0 5 1 0 1 5 2 0 2 5 c o l l e c t o r - e m i t t e r v o l t a g e : v c e [ v ] g at e - e m itt er vo l t ag e : v g e [ v ] i c =400 a i c =200 a i c =100 a 0 . 1 1 . 0 10 . 0 100 . 0 0 1 0 2 0 3 0 c a p a c i t a n c e : c i e s , c o e s , c re s [ n f ] c oll ect o r- e m itt er vo l t ag e : v ce [v ] ci es co es c res 0 30 0 60 0 90 0 120 0 c o l l e c t o r-e m i t t e r v o l t a g e : v c e [ 2 0 0 v / d i v ] g a t e - e m i t t e r v o l t a g e : v g e [ 5 v / d i v ] g at e ch arg e : qg [ n c ] v g e v ce
2 3 igbt modules 2MBI200UC-120 s w it c h i ng ti m e v s . c o ll e c t o r c u rr en t ( t y p . ) v cc =6 00 v , vg e =1 5 v , r g =3 , t j = 25 c s w it c h i ng ti m e v s . c o ll e c t o r c u rr en t ( t y p . ) v cc =6 00 v , vg e =1 5 v , r g =3 , t j =1 25 c v cc =6 00 v , i c =2 00 a , vg e =1 5 v , t j = 25 c switching time vs. gate resistance (typ.) switching loss vs. collector current (typ.) v cc =6 00 v , vg e =1 5 v , r g =3 v cc =6 00 v , i c =2 00 a , vg e =1 5 v , t j = 125 c s w it c h i ng l o ss v s . g a t e r e s i s t a n c e ( t y p . ) r e v e rs e b i a s s a f e o p e r a ti ng a r e a ( m a x . ) +v g e =1 5 v , - vg e <= 15 v , r g >= 3 , t j <= 125 c 1 0 10 0 100 0 1000 0 0 10 0 20 0 30 0 40 0 s w i t c h i n g t i m e : t o n , t r, t o f f , t f [ n s e c ] c oll ect o r cu rre nt : i c [ a ] t o n t o f f t r t f 1 0 10 0 100 0 1000 0 0 10 0 20 0 30 0 40 0 s w i t c h i n g t i m e : t o n , t r, t o f f , t f [ n s e c ] c oll ect o r cu rre nt : i c [ a ] t o f f t o n t r t f 1 0 10 0 100 0 1000 0 1 . 0 10 . 0 100 . 0 s w i t c h i n g t i m e : t o n , t r, t o f f , t f [ n s e c ] g at e res ist an ce : rg [ ] t r t f t o f f t o n 0 1 0 2 0 3 0 4 0 0 10 0 20 0 30 0 40 0 s w i t c h i n g l o s s : e o n , e o f f , e rr [ m j / p u l s e ] c oll ect o r cu rre nt : i c [ a ] eo n (1 25 c) eo n (2 5 c) eo ff (1 25 c) e rr( 125 c) e rr( 25 c) eo ff (2 5 c) 0 5 0 10 0 15 0 1 . 0 10 . 0 100 . 0 s w i t c h i n g l o s s : e o n , e o f f , e rr [ m j / p u l s e ] g at e res ist an ce : rg [ ] eo f f e rr eo n 0 10 0 20 0 30 0 40 0 50 0 0 40 0 80 0 120 0 c o l l e c t o r c u rre n t : i c [ a ] c oll ect o r - e m itt er vo l t ag e : v ce [ v ]
4 2MBI200UC-120 5 igbt modules t r a n s i en t t he r m a l r e s i s t a n c e ( m a x . ) r e v e rs e r e c o v e r y c h a r ac t e r i s ti c s ( t y p . ) v cc =6 00 v , vg e =1 5 v , r g =3 f o r w a r d c u rr en t v s . f o r w a r d on v o lt a ge ( t y p . ) c h i p 0 10 0 20 0 30 0 40 0 50 0 0 1 2 3 4 f o rw a r d c u rre n t : i f [ a ] f o rw ard o n vo l t ag e : v f [ v ] t j=125 c t j=25 c 1 0 10 0 100 0 0 10 0 20 0 30 0 40 0 r e v e rs e re c o v e ry c u rre n t : i rr [ a ] r e v e rs e re c o v e ry t i m e : t rr [ n s e c ] f o rw ard cu rre nt : i f [ a ] i rr (1 25 c) i rr (2 5 c) t rr (1 25 c) t rr (2 5 c) 0 . 00 1 0 . 01 0 0 . 10 0 1 . 00 0 0 . 00 1 0 . 01 0 0 . 10 0 1 . 00 0 t h e r m a l re s i s t a n s e : r t h (j -c ) [ c / w ] pu l s e w idth : pw [ s ec ] f w d i g bt
4 5 igbt modules 2MBI200UC-120 equivalent circuit schematic outline drawings, mm h04-004-03 13 ms5f 5485 3 2MBI200UC-120 2. equivalent circuit 1. outline drawing ( unit : mm )
6 2MBI200UC-120 igbt modules warning 1. this catalog contains the product specifcations, characteristics, data, materials, and structures as of october 2008. the contents are subject to change without notice for specifcation changes or other reasons. when using a product listed in this catalog, be sure to obtain the latest specifcations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric device technology co., ltd. is (or shall be deemed) granted. fuji electric device technology co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric device technology co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fre, or other problem if any of the products become faulty. it is recommended to make your design fail-safe, fame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric device technology co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traffc-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2008 by fuji electric device technology co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric device technology co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric device technology co., ltd. or its sales agents before using the product. neither fuji electric device technology co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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